Characterization of FeSe thin films prepared on GaAs substrate by selenization technique

被引：72

作者：

Takemura, Y ^{[1
]}

Suto, H ^{[1
]}

Honda, N ^{[1
]}

Kakuno, K ^{[1
]}

Saito, K ^{[1
]}

机构：

[1] TEIKYO UNIV SCI & TECHNOL,DEPT ELECT & INFORMAT SCI,UENOHARA,YAMANASHI 40901,JAPAN

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 81卷 / 08期

关键词：

D O I：

10.1063/1.365162

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

FeSe thin films were prepared on GaAs(100) substrate by the selenization of Fe films using molecular-beam epitaxy. FeSe compound thin films were obtained at a substrate temperature above 380 degrees C. From the depth profiles of Fe and Se in the selenized film measured by Auger electron spectroscopy, it was confirmed that an FeSe layer with a constant ratio of Fe/Se was formed. The measured composition ratio of Fe/Se in the film was 1/3. It was different from the composition in Fe3Se4 or Fe7Se8, which is a stable bulk FeSe compound. From the measured M-H curve, it was found that the obtained FeSe film consisted of two phases with different magnetic properties. (C) 1997 American Institute of Physics.

引用

页码：5177 / 5179

页数：3

共 5 条

[1]

ABE T, 1996, SPRING M JPN SOC APP

[2]

A NEUTRON DIFFRACTION INVESTIGATION OF FE3SE4 [J].