Preparation and dielectric characteristics of SrBi2Ta2O9 ceramics

被引：13

作者：

Yang, JS ^{[1
]}

Chen, XM ^{[1
]}

机构：

[1] ZHEJIANG UNIV,DEPT MAT SCI & ENGN,HANGZHOU 310027,PEOPLES R CHINA

来源：

MATERIALS LETTERS | 1996年 / 29卷 / 1-3期

关键词：

SrBi2Ta2O9; ceramics; preparation; dielectric;

D O I：

10.1016/S0167-577X(96)00123-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SrBi2Ta2O9 ceramics with layer-type bismuth structure were synthesized by a solid state reaction process, and the densification characteristics were determined together with the electric properties. SrBi2Ta2O9 ceramics sintered at 1300 degrees C showed a high Curie point peak of 1100 at 327 degrees C, high room temperature dielectric constant and low dielectric loss.

引用

页码：73 / 75

页数：3