Tunable negative differential resistance controlled by spin blockade in single-electron transistors

被引：43

作者：

Ciorga, M ^{[1
]}

Pioro-Ladriere, M

Zawadzki, P

Hawrylak, P

Sachrajda, AS

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

[2] Univ Sherbrooke, CERPEMA, Sherbrooke, PQ J1K 2R1, Canada

[3] Univ Sherbrooke, Dept Phys, Sherbrooke, PQ J1K 2R1, Canada

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 12期

关键词：

D O I：

10.1063/1.1459489

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The single-electron transistors containing a few electrons and spin polarized source and drain contacts were formed in GaAs/GaAlAs heterojunctions using metallic gates. Coulomb blockade measurements reveal well-defined regimes where a decrease in the current is observed with increasing bias. We establish that the origin of the negative regime is the spin-polarized detection of electrons combined with a long spin relaxation time in the dot. (C) 2002 American Institute of Physics.

引用

页码：2177 / 2179

页数：3

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