Optimization of metal dispersion in doped graphitic materials for hydrogen storage

被引：123

作者：

Kim, Gyubong ^{[1
]}

Jhi, Seung-Hoon ^{[1
]}

Park, Noejung ^{[2
]}

Louie, Steven G. ^{[3
,4
]}

Cohen, Marvin L. ^{[3
,4
]}

机构：

[1] Pohang Univ Sci & Technol, Dept Phys, Pohang 790784, South Korea

[2] Dankook Univ, Dept Appl Phys, Yongin 448701, Gyeonggido, South Korea

[3] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

PHYSICAL REVIEW B | 2008年 / 78卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.78.085408

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The noncovalent hydrogen binding on transition-metal atoms dispersed on carbon clusters and graphene is studied with the use of the pseudopotential density-functional method. It is found that the presence of acceptorlike states in the absorbents is essential for enhancing the metal adsorption strength and for increasing the number of hydrogen molecules attached to the metal atoms. Particular configurations of boron substitutional doping are found to be very efficient for providing such states and thus enhancing storage capacity. Optimal doping conditions are suggested based on our calculations for the binding energy and ratio between metal and hydrogen molecules.

引用

页数：5

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