Vacuum-tunneling magnetoresistance: The role of spin-polarized surface states

被引：24

作者：

Wiesendanger, R ^{[1
]}

Bode, M

Getzlaff, M

机构：

[1] Univ Hamburg, Inst Appl Phys, D-20355 Hamburg, Germany

[2] Univ Hamburg, Microstruct Res Ctr, D-20355 Hamburg, Germany

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 01期

关键词：

D O I：

10.1063/1.124296

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied magnetoresistance effects in Fe-vacuum-Gd tunnel junctions as a function of the applied bias voltage by using a scanning tunneling microscope operated under ultra-high-vacuum conditions. We found that the vacuum-tunneling magnetoresistance (VTMR) can be maximized by tunneling into highly spin-polarized surface states. By tuning the applied bias to the energetic positions of the spin-polarized surface states, a VTMR response as much as 31% at 70 K was obtained. This result is explained in terms of an enhancement caused by the spin-polarized surface state and a suppression of spin-flip tunneling processes compared to tunnel junctions with oxide barriers. (C) 1999 American Institute of Physics. [S0003-6951(99)03227-1].

引用

页码：124 / 126

页数：3

共 27 条

[1] Scanning tunneling spectroscopy of Fe/W(110) using iron covered probe tips [J].