Anomalies in the low-temperature thermoelectric power of p-Bi2Te3 and Te associated with topological electronic transitions under pressure

被引：34

作者：

Itskevich, ES

Kashirskaya, LM

Kraidenov, VF

机构：

[1] L. F. Vereshchagin Inst. High-P., Russian Academy of Sciences

来源：

SEMICONDUCTORS | 1997年 / 31卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

Magnetic Material; Electronic Transition; Electromagnetism; Thermoelectric Power; Power Measurement;

D O I：

10.1134/1.1187126

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Thermoelectric power measurements have been carried out for the narrow-band semiconductors p-Bi2Te3 and Te under pressures up to 2.5 GPa at liquid-helium temperatures. The dependences observed correlate with the data obtained by oscillation methods. These correlations allow one to use the thermoelectric power to search for topological electronic transitions in semiconductors. (C) 1997 American Institute of Physics.

引用

页码：276 / 278

页数：3

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