A modified embedded-atom potential for L10 γ-TiAl

被引：10

作者：

Chen, D ^{[1
]}

Yan, M ^{[1
]}

Liu, YF ^{[1
]}

机构：

[1] Shanghai Jiao Tong Univ, Dept Mat Sci, Shanghai 20030, Peoples R China

来源：

SCRIPTA MATERIALIA | 1999年 / 40卷 / 08期

关键词：

D O I：

10.1016/S1359-6462(99)00036-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

A modified embedded-atom method (MEAM) potential for L10 γ-TiAl was developed based on the theoretical framework of Baskes et al. The second-neighbor interactions were considered in both the potential fitting procedure and simulations for bulk and defect properties. The scaling factor for electron density was also reevaluated to effectively apply the potentials of pure elements to alloy systems. The MEAM method was especially applicable to alloys with strong directional bonding features.

引用

页码：913 / 920

页数：8

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