Spin-dependent transport in magnetic nanostructures

被引：8

作者：

Maekawa, S

Inoue, J

机构：

[1] Nagoya Univ, Nagoya

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1996年 / 156卷 / 1-3期

关键词：

Electron transport properties - Electron tunneling - Magnetic fields - Magnetic moments - Magnetoresistance - Nanostructured materials - Process control;

D O I：

10.1016/0304-8853(95)00881-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The charging energy of a metallic grain called a dot embedded in a nanowire causes the single electron tunneling. We propose that when two magnetic dots are embedded in a nanowire, the single electron tunneling process is controlled by an external magnetic field. This is because the tunneling of electrons between magnetic dots depends on the relative angle of the magnetic moments.

引用

页码：315 / 316

页数：2

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