Influences of microstructure on hydrogen sulfide sensing characteristics of tin dioxide films

被引:3
作者
Ando, M [1 ]
Tsuchida, T [1 ]
Miura, N [1 ]
Yamazoe, N [1 ]
机构
[1] KYUSHU UNIV,GRAD SCH ENGN SCI,DEPT MAT SCI & TECHNOL,KASUGA,FUKUOKA 816,JAPAN
关键词
D O I
10.1246/nikkashi.1996.348
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Three types of SnO2 films, screen printed (20 mu m thick, A), sputtered (20-500 nm, B) and SnO2 sol-derived (0.6 mu m, C), were found to have very different sensing properties to 5 ppm H2S in air. Films A and B showed sluggish response at 200 degrees C, increasing the response rate with incresing temperature accompanied by significant losses in sensitivity. On the other hand, him C showed sharp response as well as high sensitivity at 200 degrees C. As revealed from pore size distribution measurements, both A and B possessed a significant volume of micropores (less than 3 nm in diameter) while C possessed only mesopores (10-20 nm). These facts suggest that the difficulty of gas diffusion inside micropores is responsible for the sluggish response of films A and B at 200 degrees C, and that the development of large uniform mesopores leads to excellent H2S sensing characteristics of film C. Even with him C, however, the response was degraded to a lower intermediate concentration range of H2S (typically 0.1-1 ppm), suggesting that the gas diffusion inside mesopores becomes rate determining in that range.
引用
收藏
页码:348 / 353
页数:6
相关论文
共 13 条
[1]   TUNGSTEN OXIDE-BASED SEMICONDUCTOR SENSOR HIGHLY SENSITIVE TO NO AND NO2 [J].
AKIYAMA, M ;
TAMAKI, J ;
MIURA, N ;
YAMAZOE, N .
CHEMISTRY LETTERS, 1991, (09) :1611-1614
[2]   H2S-SENSITIVE THIN-FILM FABRICATED FROM HYDROTHERMALLY SYNTHESIZED SNO2 SOL [J].
ANDO, M ;
SUTO, S ;
SUZUKI, T ;
TSUCHIDA, T ;
NAKAYAMA, C ;
MIURA, N ;
YAMAZOE, N .
JOURNAL OF MATERIALS CHEMISTRY, 1994, 4 (04) :631-633
[3]   H2S AND CH3SH SENSOR USING A THICK-FILM OF GOLD-LOADED TUNGSTEN-OXIDE [J].
ANDO, M ;
SUTO, S ;
SUZUKI, T ;
TSUCHIDA, T ;
NAKAYAMA, C ;
MIURA, N ;
YAMAZOE, N .
CHEMISTRY LETTERS, 1994, (02) :335-338
[4]  
ANDO M, UNPUB
[5]   DYNAMIC PROPERTIES OF SNO2 SEMICONDUCTOR GAS SENSORS SENSING OF HYDROGEN CONTAINED IN AIR [J].
IPPOMMATSU, M ;
SASAKI, H .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1989, 136 (07) :2123-2128
[6]   H2S GAS-DETECTION BY ZRO2-DOPED SNO2 [J].
KANEFUSA, S ;
NITTA, M ;
HARADOME, M .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1988, 35 (01) :65-69
[7]   SENSING BEHAVIOR OF CUO-LOADED SNO2 ELEMENT FOR H2S DETECTION [J].
MAEKAWA, T ;
TAMAKI, J ;
MIURA, N ;
YAMAZOE, N .
CHEMISTRY LETTERS, 1991, (04) :575-578
[8]  
MAEKAWA T, 1992, SENS ACTUATORS B, V13, P713
[9]   NO2 SENSITIVE GA-DOPED ZNO THIN-FILM [J].
MATSUSHIMA, S ;
IKEDA, D ;
KOBAYASHI, K ;
OKADA, G .
CHEMISTRY LETTERS, 1992, (02) :323-326
[10]  
Nakahara T., 1991, CHEM SENSOR TECHNOLO, V3, P19