MOS devices with high quality ultra thin CVD ZrO2 Gate dielectrics and self-aligned TaN and TaN/poly-Si gate electrodes

被引：22

作者：

Lee, CH ^{[1
]}

Kim, YH ^{[1
]}

Luan, HF ^{[1
]}

Lee, SJ ^{[1
]}

Jeon, TS ^{[1
]}

Bai, WP ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Dept Elect & Comp Engn, Austin, TX 78758 USA

来源：

2001 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS | 2001年

关键词：

D O I：

10.1109/VLSIT.2001.934987

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we have successfully fabricated and characterized self-aligned TaN and TaN/poly-Si gated n-MOSFETs with ultra thin (EOT= 11 Angstrom) CVD ZrO2 gate dielectrics. It is show that while both gate stacks show excellent leakage current and Rood thermal stability after a 900degreesC, 30sec, N-2 anneal, the TaN/poly-Si ZrO2 devices exhibit superior thermal stability even after 1000degreesC 30sec N-2 anneal. In addition, the TaN/Poly-Si devices show negligible frequency dependence of CV, charge trapping, and superior TDDB characteristics, compared to TaN devices. Well-behaved N-MOSFETs with both TaN and TaN/Poly-Si gate electrodes are demonstrated..

引用

页码：137 / 138

页数：2