A 0.18μm BiCMOS technology featuring 120/100 GHz (fΤ/fmax) HBT and ASIC-compatible CMOS using copper interconnect

被引：134

作者：

Joseph, A ^{[1
]}

Coolbaugh, D ^{[1
]}

Zierak, M ^{[1
]}

Wuthrich, R ^{[1
]}

Geiss, P ^{[1
]}

He, Z ^{[1
]}

Liu, X ^{[1
]}

Orner, B ^{[1
]}

Johnson, J ^{[1
]}

Freeman, G ^{[1
]}

Ahlgren, D ^{[1
]}

Jagannathan, B ^{[1
]}

Lanzerotti, L ^{[1
]}

Ramachandran, V ^{[1
]}

Malinowski, J ^{[1
]}

Chen, H ^{[1
]}

Chu, J ^{[1
]}

Gray, P ^{[1
]}

Johnson, R ^{[1
]}

Dunn, J ^{[1
]}

Subbanna, S ^{[1
]}

Schonenberg, K ^{[1
]}

Harame, D ^{[1
]}

Groves, R ^{[1
]}

Watson, K ^{[1
]}

Jadus, D ^{[1
]}

Meghelli, M ^{[1
]}

Rylyakov, A ^{[1
]}

机构：

[1] IBM Corp, Microelect Div, Essex Jct, VT 05452 USA

来源：

PROCEEDINGS OF THE 2001 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING | 2001年

关键词：

D O I：

10.1109/BIPOL.2001.957877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A BiCMOS technology is presented that integrates a high performance NPN (f(T) = 120GHz and f(max) = 100GHz), ASIC compatible 0.11 mum L-eff CMOS, and a full suite of passive elements. Significant HBT performance enhancement compared to the previously published results in [1] has been achieved through further collector and base profile optimization guided by process and device simulations. Base transit time reduction was achieved by simultaneously increasing the Ge ramp and by limiting the base diffusion with the addition of carbon doping to SiGe epitaxial base. This paper describes IBM's next generation SiGe BiCMOS production technology targeted at the communications market.

引用

页码：143 / 146

页数：4

共 6 条

[1]

COY B, 2001, EE TIMES

[2]

FREEMAN G, 1999, 1999 IEDM, P56

[3]

Groves R., 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), P149, DOI 10.1109/BIPOL.1999.803547

[4]

LANZEROTTI L, 1996, IEDM 1996, P96

[5]

Osten H. J., 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), P109, DOI 10.1109/BIPOL.1999.803538

[6]

St. Onge S. A., 1999, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), P117, DOI 10.1109/BIPOL.1999.803539

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