Influence of strain-induced indium clustering on characteristics of InGaN/GaN multiple quantum wells with high indium composition

被引：29

作者：

Cho, HK

Lee, JY

Song, JH

Yu, PW

Yang, GM

Kim, CS

机构：

[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

[2] Kwangju Inst Sci & Technol, Dept Informat & Commun, Kwangju 500712, South Korea

[3] Chonbuk Natl Univ, Dept Semicond Sci & Technol, Duckjin Dong 561756, Chunju, South Korea

[4] Chonbuk Natl Univ, Semicond Phys Res Ctr, Duckjin Dong 561756, Chunju, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 03期

关键词：

D O I：

10.1063/1.1427143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of strain-induced indium clustering on the emission properties of InGaN/GaN multiple quantum wells grown with high indium composition by metalorganic chemical vapor deposition. Indium clustering confirmed by high-resolution transmission electron microscopy results in the redshift of the emission peak and the increase of the integrated photoluminescence (PL) intensity. We found that strong carrier localization in indium clustering induces the increases of the activation energy of PL integrated intensity, the temperature independence of PL decay profiles, and the intensity fluctuation of the cathodoluminescence images. All these observations suggest structurally and optically that the improved emission properties in the InGaN/GaN multiple quantum well with high indium composition are associated with the localized states in the strain-induced indium cluster. (C) 2002 American Institute of Physics.

引用

页码：1104 / 1107

页数：4

共 16 条

[1] Resonant hole localization and anomalous optical bowing in InGaN alloys
Bellaiche, L
Mattila, T
Wang, LW
Wei, SH
Zunger, A
[J]. APPLIED PHYSICS LETTERS, 1999, 74 (13) : 1842 - 1844
[2] BENEDICT J, 1992, MATER RES SOC SYMP P, V254, P121, DOI 10.1557/PROC-254-121
[3] Spatially resolved cathodoluminescence spectra of InGaN quantum wells
Chichibu, S
Wada, K
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 1997, 71 (16) : 2346 - 2348
[4] Evidence of localization effects in InGaN single-quantum-well ultraviolet light-emitting diodes
Chichibu, SF
Wada, K
Müllhäuser, J
Brandt, O
Ploog, KH
Mizutani, T
Setoguchi, A
Nakai, R
Sugiyama, M
Nakanishi, H
Korii, K
Deguchi, T
Sota, T
Nakamura, S
[J]. APPLIED PHYSICS LETTERS, 2000, 76 (13) : 1671 - 1673
[5] Effect of growth interruptions on the light emission and indium clustering of InGaN/GaN multiple quantum wells
Cho, HK
Lee, JY
Sharma, N
Humphreys, CJ
Yang, GM
Kim, CS
Song, JH
Yu, PW
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (16) : 2594 - 2596
[6] Electron traps and growth rate of buffer layers in unintentionally doped GaN
Cho, HK
Kim, KS
Hong, CH
Lee, HJ
[J]. JOURNAL OF CRYSTAL GROWTH, 2001, 223 (1-2) : 38 - 42
[7] Formation mechanism of V defects in the InGaN/GaN multiple quantum wells grown on GaN layers with low threading dislocation density
Cho, HK
Lee, JY
Yang, GM
Kim, CS
[J]. APPLIED PHYSICS LETTERS, 2001, 79 (02) : 215 - 217
[8] S-shaped temperature-dependent emission shift and carrier dynamics in InGaN/GaN multiple quantum wells
Cho, YH
Gainer, GH
Fischer, AJ
Song, JJ
Keller, S
Mishra, UK
DenBaars, SP
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (10) : 1370 - 1372
[9] Dependence of composition fluctuation on indium content in InGaN/GaN multiple quantum wells
Lin, YS
Ma, KJ
Hsu, C
Feng, SW
Cheng, YC
Liao, CC
Yang, CC
Chou, CC
Lee, CM
Chyi, JI
[J]. APPLIED PHYSICS LETTERS, 2000, 77 (19) : 2988 - 2990
[10] Nakamura S., 1997, BLUE LASER DIODE GAN

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