New degradation phenomenon in wide channel poly-Si TFTs fabricated by low temperature process

被引：33

作者：

Inoue, S

Ohshima, H

机构：

来源：

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996 | 1996年

关键词：

D O I：

10.1109/IEDM.1996.554096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new degradation phenomenon in low temperature (less than or equal to 425 degrees C) polycrystalline-silicon thin film transistors (poly-Si TFTs) has been investigated. The subthreshold characteristics are significantly shifted in the negative direction, which is particularly marked in wide (typical channel width : W=100 mu m) n-channel TFTs. It is considered that this degradation phenomenon is induced by the generation of holes and increase of the temperature during the operation.

引用

页码：781 / 784

页数：4