Electrical properties of covalently linked silicon polypyrrole junctions

被引：52

作者：

Vermeir, IE ^{[1
]}

Kim, NY

Laibinis, PE

机构：

[1] MIT, Dept Chem Engn, Cambridge, MA 02139 USA

[2] MIT, Dept Chem, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 25期

关键词：

D O I：

10.1063/1.124204

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electrodeposited polypyrrole films were formed on chemically modified hydrogen-terminated silicon surfaces that expose tethered pyrrole units. Semiconductor/polypyrrole junctions on the native and modified substrates exhibit diode-like characteristics, with those on the latter substrate exhibiting higher current densities and better ideality factors. Impedance measurements revealed that the improved electrical properties of junctions on the modified substrates were not due to a change in barrier height but rather a consequence of incorporating sites on the silicon surface where the polymer and semiconductor have direct contact. (C) 1999 American Institute of Physics. [S0003-6951(99)02625-X].

引用

收藏

页码：3860 / 3862

页数：3

相关论文

共 14 条

[1] THE ENERGETICS OF ELECTRON-TRANSFER AT THE POLYPYRROLE SILICON INTERFACE [J].

HOLDCROFT, S ;

FUNT, BL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (12) :3106-3109

[2] Enhancement in chemical interaction at conducting polymers/n-Si interfaces by their electroreduction [J].

Hoshino, K ;

Tokutomi, K ;

Iwata, Y ;

Kokado, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (02) :711-720

[3] POLYPYRROLE-SEMICONDUCTOR SCHOTTKY BARRIERS [J].

INGANAS, O ;

SKOTHEIM, T ;

LUNDSTROM, I .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) :3636-3639

[4]

KIM NY, IN PRESS J AM CHEM S

[5] PROPERTIES OF HETEROJUNCTION OF SI/POLY(3-METHYLTHIOPHENE) AS A FUNCTION OF POLYMERIZATION CONDITION [J].

KOKADO, H ;

HOSOKAWA, F ;

HOSHINO, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (1A) :189-194

[6] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J].

LILLINGTON, DR ;

TOWNSEND, WG .

APPLIED PHYSICS LETTERS, 1976, 28 (02) :97-98

[7] A tunable diode based on an inorganic semiconductor vertical bar conjugated polymer interface [J].

Lonergan, MC .

SCIENCE, 1997, 278 (5346) :2103-2106

[8] EFFECT OF COUNTERIONS ON THE FORMATION OF OHMIC CONTACT BETWEEN P-SI AND POLY(PYRROLE) FILM - AN AC IMPEDANCE ANALYSIS [J].

NAGASUBRAMANIAN, G ;

DISTEFANO, S ;

MOACANIN, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (02) :305-309

[9] High barrier metallic polymer p-type silicon Schottky diodes [J].

Onganer, Y ;

Saglam, M ;

Turut, A ;

Efeoglu, H ;

Tuzemen, S .

SOLID-STATE ELECTRONICS, 1996, 39 (05) :677-680

[10] ELECTRONIC-PROPERTIES OF JUNCTIONS BETWEEN SILICON AND ORGANIC CONDUCTING POLYMERS [J].

SAILOR, MJ ;

KLAVETTER, FL ;

GRUBBS, RH ;

LEWIS, NS .

NATURE, 1990, 346 (6280) :155-157