Energy deposition and transfer in electron-beam lithography

被引：46

作者：

Wu, B ^{[1
]}

Neureuther, AR

机构：

[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA

[2] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2001年 / 19卷 / 06期

关键词：

D O I：

10.1116/1.1421548

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical electron-resist interaction (ERI) model is developed based on detailed investigation of secondary electron production and binding energy related exposure events. Analysis shows that 80% of the exposure events are directly caused by secondary electrons for 100 keV primary electron energy. The number of secondary electrons and further cascade electrons is 1/20 and 1/300, respectively, of the incoming electrons. An algebraic expression is derived to describe the spatial distribution of the exposure events. The ERI model can be extended to chemically amplified resists. (C) 2001 American Vacuum Society.

引用

页码：2508 / 2511

页数：4

共 11 条

[1]

BETHE HA, 1953, EXPERIMENTAL NUCLEAR, V1, P166

[2]

HAN LQ, COMMUNICATION

[3]

Joy D. C., 1983, Microelectronic Engineering, V1, P103, DOI 10.1016/0167-9317(83)90024-2

[4]

Joy D.C., 1995, MONTE CARLO MODELING, P33