Switching dynamics and write endurance of magnetic tunnel junctions

被引：9

作者：

Bauer, M

Lopusnik, R

Fassbender, J

Hillebrands, B

Bangert, J

Wecker, J

机构：

[1] Univ Kaiserslautern, Fachbereich Phys, D-67663 Kaiserslautern, Germany

[2] Siemens AG, Corp Technol Tech CT MM 1, D-91050 Erlangen, Germany

来源：

JOURNAL OF APPLIED PHYSICS | 2002年 / 91卷 / 01期

关键词：

D O I：

10.1063/1.1423784

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The switching dynamics of magnetic tunnel junctions has been studied by means of time resolved magneto-optic Kerr magnetometry. Magnetic field pulses as short as 250 ps are found to be sufficiently long to switch the storage content of the element. In order to test the write endurance the magnetization of one single element has been reversed 10(11) times. Shortly after the initialization of the hard magnetic layer the magnetization reversal process of the soft magnetic layer remains unchanged, indicating that no further degradation of the pinned layer comes into effect. (C) 2002 American Institute of Physics.

引用

收藏

页码：543 / 545

页数：3

相关论文

共 14 条

[1] Suppression of magnetic-field pulse-induced magnetization precession by pulse tailoring [J].

Bauer, M ;

Lopusnik, R ;

Fassbender, J ;

Hillebrands, B .

APPLIED PHYSICS LETTERS, 2000, 76 (19) :2758-2760

[2] Element-selective nanosecond magnetization dynamics in magnetic heterostructures [J].

Bonfim, M ;

Ghiringhelli, G ;

Montaigne, F ;

Pizzini, S ;

Brookes, NB ;

Petroff, F ;

Vogel, J ;

Camarero, J ;

Fontaine, A .

PHYSICAL REVIEW LETTERS, 2001, 86 (16) :3646-3649

[3] Numerical investigations on the switching behavior of magnetic tunnel junctions in the quasi-static and dynamic regime [J].

Fassbender, J ;

Bauer, M .

EUROPHYSICS LETTERS, 2001, 55 (01) :119-124

[4] The magnetic stability of spin-dependent tunneling devices [J].

Gider, S ;

Runge, BU ;

Marley, AC ;

Parkin, SSP .

SCIENCE, 1998, 281 (5378) :797-799

[5] Switching in spin-valve devices in response to subnanosecond longitudinal field pulses [J].

Kaka, S ;

Russek, S .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :6391-6393

[6] Magnetization reversal in micron-sized magnetic thin films [J].

Koch, RH ;

Deak, JG ;

Abraham, DW ;

Trouilloud, PL ;

Altman, RA ;

Lu, Y ;

Gallagher, WJ ;

Scheuerlein, RE ;

Roche, KP ;

Parkin, SSP .

PHYSICAL REVIEW LETTERS, 1998, 81 (20) :4512-4515

[7] LARGE MAGNETORESISTANCE AT ROOM-TEMPERATURE IN FERROMAGNETIC THIN-FILM TUNNEL-JUNCTIONS [J].

MOODERA, JS ;

KINDER, LR ;

WONG, TM ;

MESERVEY, R .

PHYSICAL REVIEW LETTERS, 1995, 74 (16) :3273-3276

[8]

NEEL L, 1962, CR HEBD ACAD SCI, V255, P1676

[9] Exchange-biased magnetic tunnel junctions and application to nonvolatile magnetic random access memory (invited) [J].

Parkin, SSP ;

Roche, KP ;

Samant, MG ;

Rice, PM ;

Beyers, RB ;

Scheuerlein, RE ;

O'Sullivan, EJ ;

Brown, SL ;

Bucchigano, J ;

Abraham, DW ;

Lu, Y ;

Rooks, M ;

Trouilloud, PL ;

Wanner, RA ;

Gallagher, WJ .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (08) :5828-5833

[10] High-speed dynamics, damping, and relaxation times in submicrometer spin-valve devices [J].

Russek, SE ;

Kaka, S ;

Donahue, MJ .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (09) :7070-7072