Surface-state linewidth from scanning tunnelling spectroscopy

被引：12

作者：

Berndt, R

Li, J

Schneider, WD

Crampin, S

机构：

[1] Rhein Westfal TH Aachen, Inst Phys 2, D-52056 Aachen, Germany

[2] Univ Lausanne, Inst Mat Condensee, CH-1015 Lausanne, Switzerland

[3] Univ Bath, Dept Phys, Bath BA2 7AY, Avon, England

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1999年 / 69卷 / 05期

关键词：

D O I：

10.1007/s003390051453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The STM can be used to investigate lifetimes of hot holes in a surface state at low temperatures. We analysed dI/dV data from Ag(lll) using detailed tunnelling calculations and a simple model and found an electron self-energy of Sigma = 4.9 +/- 0.6 meV. The corresponding lifetime tau = 67 +/- 8 fs is considerably higher than those determined by angle-resolved photoemission, although it remains below theoretical predictions. Spatially resolved dI/dV spectra reveal that the lifetime decreases drastically in proximity to defects such as surface steps.

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页码：503 / 506

页数：4

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