The Effect of Rapid Temperature Annealing with N2 and H2 on Photoelectrochemical Properties of u-TiO2

被引：5

作者：

Bae, Hyojung ^{[1
]}

Park, Seung Hwan ^{[2
]}

Nakamura, Akihiro ^{[3
]}

Koike, Kayo ^{[3
]}

Fujii, Katsushi ^{[3
]}

Park, Hyung-Jo ^{[4
]}

Lee, Hyo-Jong ^{[5
]}

Oh, Tae-Sung ^{[6
]}

Ha, Jun-Seok ^{[1
]}

机构：

[1] Chonnam Natl Univ, Sch Appl Chem Engn, Kwangju 500757, South Korea

[2] St Gobain Res Corp Ltd, Minhang Dev Zone, Shanghai 200245, Peoples R China

[3] Univ Tokyo, Sch Engn, Dept Elect Engn & Informat Syst, Tokyo 1138656, Japan

[4] Korea Photon Technol Inst, Kwangju 500460, South Korea

[5] Dong A Univ, Dept Mat Sci & Engn, Pusan 604714, South Korea

[6] Hongik Univ, Dept Mat Sci & Engn, Seoul 121791, South Korea

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2013年 / 160卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

TIO2 NANOWIRE ARRAYS; DOPED ANATASE TIO2; WATER; HYDROGEN; METAL;

D O I：

10.1149/2.009311jes

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The effects of annealing with H-2 and N-2 on the photoelectrochemical (PEC) properties of annealed Nb-doped TiO2 (ann-TNO) film were investigated. The photocurrent density of the ann-TNO film was 2 to 3 orders of magnitude higher than that of u-TiO2 film To understand this phenomenon, ann-TNO film was investigated by comparing u-TiO2 and Nb-doped TiO2 (TNO) films. An investigation was conducted using Hall effect estimation, photoluminescence (PL) analysis, and band-gap calculation. (C) 2013 The Electrochemical Society. All rights reserved.

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收藏

页码：H800 / H802

页数：3

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