Binding-energy distribution and dephasing of localized biexcitons

被引：72

作者：

Langbein, W

Hvam, JM

Umlauff, M

Kalt, H

Jobst, B

Hommel, D

机构：

[1] UNIV KARLSRUHE, INST ANGEW PHYS, D-76128 KARLSRUHE, GERMANY

[2] UNIV BREMEN, INST FESTKORPERPHYS, D-28334 BREMEN, GERMANY

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.55.R7383

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the binding energy and dephasing of localized biexciton states in narrow ZnSe multiple quantum wells. The measured binding-energy distribution of the localized biexcitons shows a width of 2.2 meV centered at 8.5 meV, and is fairly independent of the exciton localization energy. In four-wave mixing, the biexciton photon echo decays fast and nonexponentially. This behavior results from the inhomogeneous broadening of the biexciton binding energy, as we show by a comparison with an analytical model calculation. The fast decay is thus not related to a fast microscopic biexciton dephasing.

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收藏

页码：R7383 / R7386

页数：4

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