SnO2 thin films prepared by the sol-gel process

被引：65

作者：

Racheva, TM

Critchlow, GW

机构：

[1] UNIV LOUGHBOROUGH,INST SURFACE SCI & TECHNOL,LOUGHBOROUGH LE12 3TU,LEICS,ENGLAND

[2] HIGHER INST CHEM TECHNOL,DEPT SEMICOND,BU-1156 SOFIA,BULGARIA

来源：

THIN SOLID FILMS | 1997年 / 292卷 / 1-2期

关键词：

Auger electron spectroscopy; secondary electron microscopy; sensors; tin oxide;

D O I：

10.1016/S0040-6090(96)08956-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnO2 thin films were prepared by the sol-gel process using an alcoholic solution of Sn(OC2H5)(4)2C(2)H(5)OH as the precursor. After subsequent annealing, the temperature of which was varied according to the substrate (oxidised silicon, glass or ceramic glass), the films were characterised by scanning electron microscopy, electron diffraction and Auger electron spectroscopy. The sensitivity of these films to variations in humidity was established for values in the range 0% to 93% relative humidity.

引用

页码：299 / 302

页数：4

共 17 条

[1] OPTICAL AND PHOTOVOLTAIC CHARACTERISTICS OF IN-MODIFIED SNO2 THIN-FILMS [J].