Double layer capacitance measured by organic field effect transistor operated in water

被引:65
作者
Cramer, T. [1 ]
Kyndiah, A. [1 ]
Murgia, M. [1 ]
Leonardi, F. [1 ]
Casalini, S. [1 ]
Biscarini, F. [1 ]
机构
[1] CNR, ISMN, Ist Studio Mat Nanostrutturati, I-40129 Bologna, Italy
关键词
THIN-FILM TRANSISTORS; ELECTROCHEMICAL TRANSISTORS; CHARGE-TRANSPORT; DIMENSIONALITY; FABRICATION; ADHESION; SENSORS; DEVICES;
D O I
10.1063/1.3699218
中图分类号
O59 [应用物理学];
学科分类号
摘要
Pentacene ultra thin film transistors were exposed to water and operated with a conventional silicon/silicon oxide bottom gate and an electrolyte top gate controlled by a working electrode. The transistors are highly sensible (mu V) to the electrochemical potential of the aqueous electrolyte. We show that dual gate operation permits the measurement of the double layer capacitance, C-DL = 14.6 mu F/cm(2). The device exhibits a fast (4.6 ms) and stable response, without bias stress as opposed to conventional bottom gate operations, when controlled with the electrolyte gate. These features make the device a promising candidate for potentiometric transducers required for non-invasive electrophysiology. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3699218]
引用
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页数:4
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