Ru/Ru-oxide interlayers for CoCrPtO perpendicular recording media

被引：34

作者：

Kwon, U ^{[1
]}

Sinclair, R

Velu, EMT

Malhotra, S

Bertero, G

机构：

[1] Stanford Univ, Dept Mat Sci & Engn, Stanford, CA 94305 USA

[2] Komag Inc, San Jose, CA 95131 USA

来源：

IEEE TRANSACTIONS ON MAGNETICS | 2005年 / 41卷 / 10期

关键词：

CoCrPtO perpendicular media; exchange decoupling; interlayer; magnetic properties; microstructure; ruthenium; transmission electron microscopy;

D O I：

10.1109/TMAG.2005.855281

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel Ru/Ru-oxide interlayer structure was investigated to improve intergranular decoupling in a magnetic layer. The effect of this interlayer on the microstructure, and magnetic properties of CoCrPtO perpendicular media is reported. By using a Ru-oxide layer on a conventional Ru layer, the interlayer grain size was 11 nm. The resulting vertical c-axis dispersion of the interlayer was less than 3 degrees with no disruption in epitaxial growth throughout the Ru/Ru-oxide and Ru-oxide/magnetic layer interfaces. Grain clusters in the CoCrPtO magnetic layer were observed to match one-to-one with interlayer grains, and were well isolated from each other by nonmagnetic oxide phase grain boundaries. A high coercivity (over 6.9 kOe) and a nucleation field of -2.8 kOe were obtained with this Ru (26 nm)/Ru-oxide (2 nm) interlayer structure.

引用

页码：3193 / 3195

页数：3

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