Large 1/f noise in polysilicon TFT loads and its effects on the stability of SRAM cells

被引：18

作者：

Aoki, M ^{[1
]}

Hashimoto, T ^{[1
]}

Yamanaka, T ^{[1
]}

Nagano, T ^{[1
]}

机构：

[1] HITACHI LTD,SEMICOND & INTEGRATED CIRCUITS DIV,KOKUBUNJI,TOKYO 185,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1996年 / 35卷 / 2B期

关键词：

polysilicon TFT; drain current fluctuation; 1/f noise; SRAM; cell stability; grain-boundary barrier;

D O I：

10.1143/JJAP.35.838

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have observed very large drain current fluctuations over time in polysilicon thin film transistors (TFTs). The noise with 1/f power spectra in TFTs is found to be about 10(4) times larger than that in single-crystalline Si metal oxide semiconductor (MOS) transistors. The influence of 1/f noise in TFTs on static random access memory (SRAM) cell stability is clarified for the first time. Maintaining a high on-current and lowering of the grain-boundary barrier are found to be essential for increasing stability.

引用

页码：838 / 841

页数：4

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