Advanced magneto-transport characterization of LPE-Grown Hg1-xCdxTe by quantitative mobility spectrum analysis

We report the development, optimization, and testing of an advanced quantitative mobility spectrum analysis (QMSA) technique for determining free electron and hole densities and mobilities from field-dependent Hall and resistivity data. Application to temperature-dependent data for a series of 25 LPE-grown n-type and p-type Hg1-xCdxTe samples confirms that the fully automated procedure yields accurate and reliable results for all classes of samples, and also has greater sensitivity to minority carrier concentrations than previous mixed-conduction analysis methods. The QMSA is found to be a suitable standard tool for the routine electrical characterization of semiconductor materials and devices.