Characterization of nano recorded marks at different writing strategies on phase-change recording layer of optical disks

被引：28

作者：

Lin, Shih Kai ^{[1
]}

Lin, I. Chun

Tsai, Din Ping

机构：

[1] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Ctr Nanostorage Res, Taipei 10617, Taiwan

[3] Natl Taiwan Univ, Inst Electroopt Sci & Technol, Taipei 116, Taiwan

[4] Acad Sinica, Res Ctr Appl Sci, Taipei 115, Taiwan

来源：

OPTICS EXPRESS | 2006年 / 14卷 / 10期

关键词：

D O I：

10.1364/OE.14.004452

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Conductive-atomic force microscopy has been successfully used for characterizing recorded marks on commercial digital versatile disk and Blu-ray disk. Nano recorded marks beyond diffraction limit are imaged with high spatial resolution and excellent contrast of conductivity. The smallest mark size resolved is around 23.5 nm which is limited by background spots around 18.5 nm. The results of different optical power and writing strategy on the size, shape, and close packed writing process of recorded marks clearly show the opto-thermal response of phase-change recording layer. (c) 2006 Optical Society of America.

引用

页码：4452 / 4458

页数：7

共 14 条

[1] Micro-optical nonlinearity of a silver oxide layer [J].

Fukaya, T ;

Büchel, D ;

Shinbori, S ;

Tominaga, J ;

Atoda, N ;

Tsai, DP ;

Lin, WC .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :6139-6144

[2]

Kikukawa T, 2001, MICROSC MICROANAL, V7, P363, DOI 10.1007/s100050010085

[3] In situ transmission electron microscopy study of the crystallization of Ge2Sb2Te5 [J].

Kooi, BJ ;

Groot, WMG ;

De Hosson, JTM .

JOURNAL OF APPLIED PHYSICS, 2004, 95 (03) :924-932

[4] Study of a super-resolution optical structure:: Polycarbonate/ZnS-SiO2/ZnO/ZnS-SiO2/Ge2Sb2Te5/ZnS-SiO2 [J].

Lin, WC ;

Kao, TS ;

Chang, HH ;

Lin, YH ;

Fu, YH ;

Wu, CT ;

Chen, KH ;

Tsai, DP .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (2B) :1029-1030

[5] Near-field images of the AgOx-type super-resolution near-field structure [J].

Liu, WC ;

Wen, CY ;

Chen, KH ;

Lin, WC ;

Tsai, DP .

APPLIED PHYSICS LETTERS, 2001, 78 (06) :685-687

[6] Observation of recording marks in phase-change media using scanning electron microscopy channelling contrast image [J].

Luoh, T ;

Bow, JS ;

Peng, A ;

Tsai, SY ;

Tseng, MR .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (3B) :1698-1700

[7] Numerical simulation of mark formation in dual-stack phase-change recording [J].

Meinders, ER ;

Borg, HJ ;

Lankhorst, MHR ;

Hellmig, J ;

Mijiritskii, AV .

JOURNAL OF APPLIED PHYSICS, 2002, 91 (12) :9794-9802

[8] Analysis of mark-formation process for phase-change media [J].

Miyamoto, M ;

Hirotsune, A ;

Miyauchi, Y ;

Ando, K ;

Terao, M ;

Tokusyuku, N ;

Tamura, R .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1998, 4 (05) :826-831

[9] Overview and the future of phase-change optical disk technology [J].

Ohta, T ;

Nishiuchi, K ;

Narumi, K ;

Kitaoka, Y ;

Ishibashi, H ;

Yamada, N ;

Kozaki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (2B) :770-774

[10]

PENG C, 1999, J APPL PHYS, V82, P4183

← 1 2 →