Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions

被引：460

作者：

Huai, YM ^{[1
]}

Albert, F ^{[1
]}

Nguyen, P ^{[1
]}

Pakala, M ^{[1
]}

Valet, T ^{[1
]}

机构：

[1] Grandis Inc, R&D Dept, Milpitas, CA 95035 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 16期

关键词：

D O I：

10.1063/1.1707228

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The spin-transfer effect has been studied in magnetic tunnel junctions (PtMn/CoFe/Ru/CoFe/Al2O3/CoFe/NiFe) with dimensions down to 0.1x0.2 mum(2) and resistance-area product RA in the range of 0.5-10 Omega mum(2) (DeltaR/R=1%-20%). Current-induced magnetization switching is observed with a critical current density of about 8x10(6) A/cm(2). The attribution of the switching to the spin-transfer effect is supported by a current-induced DeltaR/R value identical to the one obtained from the R versus H measurements. Furthermore, the critical switching current density has clear dependence on the applied magnetic field, consistent with what has been observed previously in the case of spin-transfer-induced switching in metallic multilayer systems. (C) 2004 American Institute of Physics.

引用

页码：3118 / 3120

页数：3

共 17 条

[1] Quantitative study of magnetization reversal by spin-polarized current in magnetic multilayer nanopillars [J].