Advances in physically based erosion simulators for CMP

被引:42
作者
Runnels, SR
机构
[1] Southwest Research Institute, San Antonio, TX 78228
关键词
chemical-mechanical planarization; erosion; oxide films; stress;
D O I
10.1007/BF02655578
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Advances in two types of chemical-mechanical planarization (CMP) erosion simulators are reported in the context of a CMP modeling overview. One advance is a physically based erosion simulation platform that is capable of simulating the complete erosion of multiple oxide features. The platform separates the erosion model from the stress model, making it easy to use and versatile. Another advance is the development of a hybrid approach to erosion modeling that mixes generic physics with phenomenological understanding. The hybrid simulator is capable of accurate three-dimensional erosion simulation across large patterns, a capability that will eventually lead to die-wide CMP simulation.
引用
收藏
页码:1574 / 1580
页数:7
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