Epitaxial structure SrBi2Ta2O9<116>/SrTiO3<011> /Ce0.12Zr0.88O2<001> /Si<001> for ferroelectric-gate FET memory

被引:5
作者
Migita, S [1 ]
Sakamaki, K [1 ]
Ota, H [1 ]
Xiong, SB [1 ]
Tarui, Y [1 ]
Sakai, S [1 ]
机构
[1] Natl Inst Adv Ind Sci & Technol, Tsukuba, Ibaraki 3058568, Japan
关键词
metal-ferroelectric-insulator-semiconductor (MFIS); field effect; transistor (FET); epitaxy; SrBi2Ta2O9; pulsed laser deposition;
D O I
10.1080/10584580108010836
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Epitaxial thin film growth of SrBi2Ta2O9/SrTiO3/Ce0.12Zr0.88O2 on Si was studied, and this epitaxial layer structure was applied to fabrication of ferroelectric-gate field effect transistors (FETs). The films were prepared by a pulsed laser deposition technique and epitaxial growth was identified by x-ray diffraction. The devices exhibited excellent electrical performances: capacitance-voltage characteristic of a metal-ferroelectric-insulator-semiconductor (MFIS) diode showed a retention longer than 10 days and I-d-V-g characteristic of an MFIS-FET showed I day retention. It is proved that the crystalline quality of ferroelectric thin films is of great importance to develop integrated devices with high performance.
引用
收藏
页码:135 / 143
页数:9
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