共 19 条
[1]
AIZAWA K, 1999, INTEGR FERROELECTR, V27, P1
[2]
ARITA K, 1999, INTEGR FERROELECTR, V27, P19
[3]
CHUNG I, 1999, INTEGR FERROELECTR, V27, P31
[4]
Properties of ferroelectric memory FET using Sr2(Ta, Nb)2O7 thin film
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1999, 38 (4B)
:2285-2288
[6]
GRUVERMAN A, 1999, INTEGR FERROELECTR, V27, P159
[7]
Preparation of SrBi2Ta2O9 film at low temperatures and fabrication of a metal/ferroelectric/insulator/semiconductor field effect transistor using Al/SrBi2Ta2O9/CeO2/Si(100) structures
[J].
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS,
1997, 36 (9B)
:5908-5911