Morphology evolution and photoluminescence properties of ZnO films electrochemically deposited on conductive glass substrates
被引:139
作者:
Cao, BQ
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
Cao, BQ
Cai, WP
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机构:
Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R ChinaChinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
Cai, WP
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Zeng, HB
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
Zeng, HB
Duan, GT
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机构:Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
Duan, GT
机构:
[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China
The current-dependent morphology evolution and photoluminescence properties of zinc oxide (ZnO) films prepared by electrochemical deposition (ECD) method were studied in this paper. It has been shown that the morphologies of ZnO films vary from porous to dense structure, from pillar crystal array to two-dimensional nanosheet covered film, with increase of deposition currents. Correspondingly, orientation of the film evolves from randomly to highly c-axis oriented structure. Current dependence of morphology is attributed to the ECD current-controlled preferential growth velocity along the c axis. All the ZnO films prepared over a wide current range show strong ultraviolet (UV) emission at room temperature, which also shows deposition current dependence in intensity, together with relatively weak defect-related green emission under UV excitations. Further experiments have revealed that a nonradiative relax process and a radiative electron-hole combination process are involved in this defect-related green emission and the excitonic origin of UV emission was also proved.
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Cao, BQ
Sun, FQ
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Sun, FQ
Cai, WP
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机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
机构:
Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R ChinaChinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Cao, BQ
Sun, FQ
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h-index: 0
机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China
Sun, FQ
Cai, WP
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h-index: 0
机构:Chinese Acad Sci, Inst Solid State Phys, Key Lab Mat Phys, Hefei 230031, Anhui, Peoples R China