Morphology evolution and photoluminescence properties of ZnO films electrochemically deposited on conductive glass substrates

被引:139
作者
Cao, BQ
Cai, WP [1 ]
Zeng, HB
Duan, GT
机构
[1] Chinese Acad Sci, Key Lab Mat Phys, Inst Solid State Phys, Hefei 230031, Peoples R China
[2] Chinese Acad Sci, Anhui Key Lab Nanomat & Nanostruct, Inst Solid State Phys, Hefei 230031, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
10.1063/1.2188132
中图分类号
O59 [应用物理学];
学科分类号
摘要
The current-dependent morphology evolution and photoluminescence properties of zinc oxide (ZnO) films prepared by electrochemical deposition (ECD) method were studied in this paper. It has been shown that the morphologies of ZnO films vary from porous to dense structure, from pillar crystal array to two-dimensional nanosheet covered film, with increase of deposition currents. Correspondingly, orientation of the film evolves from randomly to highly c-axis oriented structure. Current dependence of morphology is attributed to the ECD current-controlled preferential growth velocity along the c axis. All the ZnO films prepared over a wide current range show strong ultraviolet (UV) emission at room temperature, which also shows deposition current dependence in intensity, together with relatively weak defect-related green emission under UV excitations. Further experiments have revealed that a nonradiative relax process and a radiative electron-hole combination process are involved in this defect-related green emission and the excitonic origin of UV emission was also proved.
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页数:6
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