Brillouin characterization of the acousticwaves phase-velocity in AlxGa1-xN epilayers

被引：4

作者：

Rubio-Zuazo, J

Jiménez-Riobóo, RJ

Rodríguez-Cañas, E

Prieto, C ^{[1
]}

Palacios, T

Calle, F

Monroy, E

Sánchez-García, MA

机构：

[1] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain

[2] Univ Politecn Madrid, ETSI Telecomunicac, Inst Sistemas Optoelect & Microtecnol, E-28040 Madrid, Spain

[3] Univ Politecn Madrid, ETSI Telecomunicac, Dept Ingn Elect, E-28040 Madrid, Spain

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 93卷 / 1-3期

关键词：

gallium nitride; aluminum nitrides; thin films Brillouin scattering spectroscopy; SAW velocity;

D O I：

10.1016/S0921-5107(02)00020-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

AlN-based compounds are studied as potential candidate to be used as substrate in surface acoustic wave (SAW) devices. In this paper, we present a study of the acoustic waves phase velocity behavior of a Al-x Ga1-x N thin film set prepared by molecular beam epitaxy on Si(111) (0 less than or equal to x less than or equal to 1 covering the full x-range). This study has been carried out by Brillouin spectroscopy and shows a nearly linear compositional dependence in the full range of concentrations. The maximum value the phase velocity for waves traveling along the film plane directions (11 200 m s(-1)) is reached for AlN. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：168 / 171

页数：4

共 18 条

[1] Growth kinetics and morphology of high quality AlN grown on Si(111) by plasma-assisted molecular beam epitaxy [J].