35 nm metal gate p-type metal oxide semiconductor field-effect transistor with PtSi Schottky source/drain on separation by implanted oxygen substrate

P-type metal oxide semiconductor field-effect transistors with PtSi Schottky sources/drains with a 35-nm long metal gate were fabricated on a separation by implanted oxygen substrate by electron-beam lithography and a self-aligned silicide process. The drain current was -176 mu A/mu m and the transconductance was 390 mS/mm at V-DS = V-GS = -1.5 V For these devices, comparable drivability to conventional metal oxide semiconductor field-effect transistors was achieved. The on/off ratio was improved using a very thin silicon-on-insulator structure.