Inversion of wurtzite GaN(0001) by exposure to magnesium

被引:185
作者
Ramachandran, V [1 ]
Feenstra, RM
Sarney, WL
Salamanca-Riba, L
Northrup, JE
Romano, LT
Greve, DW
机构
[1] Carnegie Mellon Univ, Dept Phys, Pittsburgh, PA 15213 USA
[2] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA
[3] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA
[4] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA
关键词
D O I
10.1063/1.124520
中图分类号
O59 [应用物理学];
学科分类号
摘要
Magnesium incorporation during the molecular-beam epitaxy growth of wurtzite GaN is found to invert the Ga-polar (0001) face to the N-polar face. The polarity is identified based on the two different sets of reconstructions seen on the film prior to and after about 1 monolayer Mg exposure. The inversion boundary is seen to lie on the (0001) plane from transmission electron microscopy images, and a structural model is presented for the inversion. On the Ga-polar face, Mg is also seen to stabilize growth in the N-rich regime. (C) 1999 American Institute of Physics. [S0003-6951(99)04132-7].
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收藏
页码:808 / 810
页数:3
相关论文
共 21 条
  • [1] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI)
    AMANO, H
    KITO, M
    HIRAMATSU, K
    AKASAKI, I
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12): : L2112 - L2114
  • [2] Magnesium induced changes in the selective growth of GaN by metalorganic vapor phase epitaxy
    Beaumont, B
    Haffouz, S
    Gibart, P
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (08) : 921 - 923
  • [3] Surface sensitivity of impurity incorporation: Mg at GaN (0001) surfaces
    Bungaro, C
    Rapcewicz, K
    Bernholc, J
    [J]. PHYSICAL REVIEW B, 1999, 59 (15) : 9771 - 9774
  • [4] Cheng TS, 1997, MRS INTERNET J N S R, V2
  • [5] The influence of the deformation on the two-dimensional electron gas density in GaN-AlGaN heterostructures
    Gaska, R
    Yang, JW
    Bykhovski, AD
    Shur, MS
    Kaminski, VV
    Soloviov, SM
    [J]. APPLIED PHYSICS LETTERS, 1998, 72 (01) : 64 - 66
  • [6] Mg in GaN: Incorporation of a volatile species at high temperatures during molecular beam epitaxy
    Guha, S
    Bojarczuk, NA
    Cardone, F
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (12) : 1685 - 1687
  • [7] LILIENTALWEBER Z, 1999, IN PRESS WIDE BAND G
  • [8] HOLE COMPENSATION MECHANISM OF P-TYPE GAN FILMS
    NAKAMURA, S
    IWASA, N
    SENOH, M
    MUKAI, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (5A): : 1258 - 1266
  • [9] Nakamura S., 1992, JPN J APPL PHYS, V31, P139
  • [10] Clean and As-covered zinc-blende GaN (001) surfaces: Novel surface structures and surfactant behavior
    Neugebauer, J
    Zywietz, T
    Scheffler, M
    Northrup, JE
    Van de Walle, CG
    [J]. PHYSICAL REVIEW LETTERS, 1998, 80 (14) : 3097 - 3100