Room temperature manipulation of C-60 molecules on a Si surface

被引：17

作者：

Beton, PH

Dunn, AW

Moriarty, P

机构：

[1] Department of Physics, University of Nottingham

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

基金：

英国工程与自然科学研究理事会;

关键词：

adatoms; atom-solid interactions; carbon; models of surface kinetics; physical adsorbtion; scanning tunneling microscopy; surface diffusion; surface electrical transport; surface electronic phenomena; surface energy;

D O I：

10.1016/0039-6028(96)00555-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The rip of a scanning tunnelling microscope is used to position individual C-60 molecules on an Si(111)-(7 x 7) surface. The molecules may be manipulated into simple patterns and we describe in addition how a molecule may be moved over a bilayer step between two terraces. We also discuss C-60 manipulation on an Si(111) surface with a submonolayer coverage of Ag.

引用

页码：878 / 881

页数：4

共 9 条

[1] MANIPULATION OF C-60 MOLECULES ON A SI SURFACE
BETON, PH
DUNN, AW
MORIARTY, P
[J]. APPLIED PHYSICS LETTERS, 1995, 67 (08) : 1075 - 1077
[2] SINGLE-MONOLAYER ORDERED PHASES OF C-60 MOLECULES ON SI(111)-(7X7) SURFACES
CHEN, D
CHEN, J
SARID, D
[J]. PHYSICAL REVIEW B, 1994, 50 (15): : 10905 - 10909
[3] CONFINEMENT OF ELECTRONS TO QUANTUM CORRALS ON A METAL-SURFACE
CROMMIE, MF
LUTZ, CP
EIGLER, DM
[J]. SCIENCE, 1993, 262 (5131) : 218 - 220
[4] POSITIONING SINGLE ATOMS WITH A SCANNING TUNNELING MICROSCOPE
EIGLER, DM
SCHWEIZER, EK
[J]. NATURE, 1990, 344 (6266) : 524 - 526
[5] ADSORPTION OF INDIVIDUAL C-60 MOLECULES ON SI(111)
LI, YZ
CHANDER, M
PATRIN, JC
WEAVER, JH
CHIBANTE, LPF
SMALLEY, RE
[J]. PHYSICAL REVIEW B, 1992, 45 (23) : 13837 - 13840
[6] THRESHOLD HEIGHT FOR MOVEMENT OF C-60 MOLECULES ON SI(111)-7X7 WITH A SCANNING TUNNELING MICROSCOPE
MARUNO, S
INANAGA, K
ISU, T
[J]. APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1339 - 1341
[7] SOTO S, 1994, JPN J APPL PHYS, V33, pL1489
[8] STRUCTURAL-ANALYSIS OF SI(111)-7X7 BY UHV-TRANSMISSION ELECTRON-DIFFRACTION AND MICROSCOPY
TAKAYANAGI, K
TANISHIRO, Y
TAKAHASHI, M
TAKAHASHI, S
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03): : 1502 - 1506
[9] INITIAL-STAGE OF AG CONDENSATION ON SI(111)7X7
TOSCH, S
NEDDERMEYER, H
[J]. PHYSICAL REVIEW LETTERS, 1988, 61 (03) : 349 - 352

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