Molecular beam epitaxy of CdS ZnSe heterostructures

被引：22

作者：

Petillon, S

Dinger, A

Grün, M

Hetterich, M

Kazukauskas, V

Klingshirn, C

Liang, J

Weise, B

Wagner, V

Geurts, J

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

[2] Univ Wurzburg, Inst Phys, D-97076 Wurzburg, Germany

[3] Vilnius State Univ, Semicond Phys Dept, LT-2040 Vilnius, Lithuania

来源：

JOURNAL OF CRYSTAL GROWTH | 1999年 / 201卷

关键词：

MBE; CdS ZnSe; critical thickness;

D O I：

10.1016/S0022-0248(98)01374-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We investigated the growth of CdS/ZnSe type II quantum-well structures, produced by MBE for the first time. Epitaxy was carried out with compound sources on GaAs(001) substrates. The best results were achieved on ZnSe buffer layers and at rather low substrate temperatures (T = 170 degrees C). Photoluminescence measurements showed intense luminescence bands in the energy range from 2.0 to 2.65 eV depending on the quantum-well thickness. The PL bands are quite narrow (16-43 meV). X-ray diffraction profiles of superlattices revealed satellite peaks up to the fourth order. The critical thickness for the coherent growth of CdS on ZnSe was determined by detecting the quenching of the PL intensity as a function of the quantum-well thickness; it is about 4.5 nm. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：453 / 456

页数：4

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