Epitaxial growth and characterization of Ce1-xZrxO2 thin films

被引：23

作者：

Gao, Y ^{[1
]}

Herman, GS ^{[1
]}

Thevuthasan, S ^{[1
]}

Peden, CHF ^{[1
]}

Chambers, SA ^{[1
]}

机构：

[1] Pacific NW Natl Lab, Environm Mol Sci Lab, Richland, WA 99352 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1999年 / 17卷 / 03期

关键词：

D O I：

10.1116/1.581671

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Epitaxial films of mixed Ce1-xZrxO2(001) oxides with x less than or equal to 0.3 have been grown on SrTiO3(001) by oxygen-plasma-assisted molecular beam epitaxy. The film growth at 600 degrees C is predominantly nucleation and growth of three-dimensional islands. The films become much smoother after rapid thermal annealing at 700 degrees C for 30 s in the oxygen plasma. High-energy ion channeling reveals that Zr atoms substitutionally incorporate at cation sites in the CeO2 lattice for all doping levels, leading to Ce1-xZrxO2 solid solutions. Analysis of Zr 3d and Ce 3d core-level binding energies shows that the oxidation state of both Zr and Ce is +4. Lattice distortion induced by incorporation of Zr in the CeO2 lattice becomes prevalent for high doping levels and surface roughen accordingly. (C) 1999 American Vacuum Society. [S0734-2101(99)04303-1].

引用

页码：961 / 969

页数：9

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