Magnetic domains in III-V magnetic semiconductors -: art. no. 241201

被引:88
作者
Dietl, T
König, J
MacDonald, AH
机构
[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland
[2] Polish Acad Sci, Coll Sci, PL-02668 Warsaw, Poland
[3] Univ Karlsruhe, Inst Theoret Festkorperphys, D-76128 Karlsruhe, Germany
[4] Univ Texas, Dept Phys, Austin, TX 78712 USA
关键词
D O I
10.1103/PhysRevB.64.241201
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Recent progress in the theoretical understanding of magnetic anisotropy and stiffness in Ill-V magnetic semiconductors is exploited for predictions of magnetic domain characteristics and methods of their tuning. We evaluate the width and the energy of domain walls as well as the period of stripe domains in perpendicular films. The computed stripe width W = 1.1 mum for Ga0.957Mn0.043As/In0.16Ga0.84As compares favorably to the experimental value 1.5 mum, as determined by Shono et al. [Appl. Phys. Lett. 77, 1363 (2000)].
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