Formation of InP nanoparticles by laser ablation in an aqueous environment

被引：14

作者：

Musaev, O. R. ^{[1
]}

Wrobel, J. M. ^{[1
]}

Wieliczka, D. M. ^{[1
]}

Dusevich, V. ^{[2
]}

Kruger, M. B. ^{[1
]}

机构：

[1] Univ Missouri, Dept Phys, Kansas City, MO 64110 USA

[2] Univ Missouri, Dept Oral Biol, Kansas City, MO 64110 USA

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2008年 / 40卷 / 10期

关键词：

nanoparticles; InP; laser ablation;

D O I：

10.1016/j.physe.2008.05.003

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Indium phosphide (InP) semiconductor nanoparticles were obtained by laser ablation of a crystalline wafer in water. The transmission electron microscopy micrographs of the nanoparticles show that their size is in the range of 100 nm. In the Raman spectrum of the nanoparticles, the characteristic peaks of InP have been observed in the vicinity of 300 and 340 cm(-1). The binding energies as measured from the X-ray photoemission spectra are consistent with values for InP crystal as well as indium oxides. (C) 2008 Elsevier B.V. All rights reserved.

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页码：3147 / 3150

页数：4

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