Threshold gain and threshold current analysis of circular grating DFB organic semiconductor lasers

被引：5

作者：

Barlow, GF ^{[1
]}

Shore, KA ^{[1
]}

机构：

[1] Univ Wales, Bangor Sch Informat, Bangor LL57 1UT, Gwynedd, Wales

来源：

IEE PROCEEDINGS-OPTOELECTRONICS | 2001年 / 148卷 / 04期

关键词：

D O I：

10.1049/ip-opt:20010692

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analysis of a circular grating organic semiconductor distributed feedback laser (CG-DFB OSL) operating at 632 nm is performed. Threshold current calculations are undertaken using gain coefficients for the Alq(3):DCM lasing material employed. It is shown how variations in the radii of the inner and outer sections of an annular grating may be expected to affect threshold characteristics.

引用

页码：165 / 170

页数：6

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