Temperature dependent field effect in organic-based thin-film transistor and its spectroscopic character

The thin field-effect transistor based on amorphous semiconductors, both inorganic or organic, is modeled using an iterative scheme. The results of modeling gave insight into the temperature dependencies of this device. Further, we present the differential procedure, based on the first and higher derivatives of the data, to derive from the field-effect characteristics the basic parameters of the active semiconductor film, i.e., the density of states and field-effect mobility. (C) 1999 American Institute of Physics. [S0021-8979(99)07513-1].