Evidence for graphene growth by C cluster attachment

被引:249
作者
Loginova, Elena [1 ]
Bartelt, Norman C. [1 ]
Feibelman, Peter J. [2 ]
McCarty, Kevin F. [1 ]
机构
[1] Sandia Natl Labs, Livermore, CA 94550 USA
[2] Sandia Natl Labs, Albuquerque, NM 87185 USA
来源
NEW JOURNAL OF PHYSICS | 2008年 / 10卷
关键词
D O I
10.1088/1367-2630/10/9/093026
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Using low-energy electron microscopy (LEEM), we have measured the local concentration of mobile carbon adatoms from which graphene sheets form on a Ru(0001) surface, and simultaneously, the growth rates of individual graphene islands. Graphene crystal growth on Ru differs strikingly from that of two-dimensional metal islands on metals: (i) C adatoms experience a large energy barrier to attaching to graphene step edges, so adatom diffusion does not limit growth. (ii) The supersaturations needed for appreciable growth rates are comparable to those required to nucleate islands. (iii) The growth rate is a highly nonlinear function of supersaturation, with a large activation energy (2.0 +/- 0.1 eV). Our analysis suggests that graphene grows by adding rare clusters of about five atoms rather than adding the abundant monomers ( adatoms). Knowing the growth mechanism and monitoring the supersaturation, we can control the pattern of growing graphene sheets.
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页数:16
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