Epitaxial ferroelectric Pb(Zr, Ti)O3 thin films on Si using SrTiO3 template layers

被引：123

作者：

Wang, Y ^{[1
]}

Ganpule, C

Liu, BT

Li, H

Mori, K

Hill, B

Wuttig, M

Ramesh, R

Finder, J

Yu, Z

Droopad, R

Eisenbeiser, K

机构：

[1] Univ Maryland, Dept Mat & Nucl Engn, College Pk, MD 20742 USA

[2] Motorola Labs, Phys Sci Res Labs, Tempe, AZ 85284 USA

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 01期

关键词：

D O I：

10.1063/1.1428413

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, we report on the integration of epitaxial ferroelectric Pb(Zr, Ti)O-3 (PZT) thin films on Si [100] substrates using a SrTiO3 (STO) template layer and a conducting perovskite (La0.5Sr0.5)CoO3 electrode. X-ray diffraction studies reveal both in-plane and out-of-plane alignment of the heterostructure. The epitaxial films show extremely high remnant polarization as well as piezoelectric d(33) coefficients compared to textured and untextured polycrystalline films. (C) 2002 American Institute of Physics.

引用

页码：97 / 99

页数：3

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