Laterally oxidized long wavelength cw vertical-cavity lasers

被引：24

作者：

Margalit, NM

Babic, DI

Streubel, K

Mirin, RP

Mars, DE

Bowers, JE

Hu, EL

机构：

[1] Dept. of Elec. and Comp. Engineering, University of California, Santa Barbara

[2] Hewlett-Packard Laboratories, Palo Alto, CA

[3] Royal Institute of Technology, Stockholm

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 04期

关键词：

D O I：

10.1063/1.118143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report a novel long wavelength(1.55 mu m) vertical cavity laser using a current constricting AlAs oxidation layer. The devices exhibit record low room temperature continuous wave (cw) threshold current(1.3 mA) and highest cw operating temperature reported for long wavelength VCLs(39 degrees C). Wafer fusion is used to combined seven strain compensated InGaAsP wells between two Al(Ga)As/GaAs quarter wave mirrors. (C) 1996 American Institute of Physics.

引用

页码：471 / 472

页数：2

共 7 条

[1] ROOM-TEMPERATURE CONTINUOUS-WAVE OPERATION OF 1.54-MU-UM VERTICAL-CAVITY LASERS [J].