Spin polarization dependent far infrared absorption in Ga1-xMnxAs

被引:43
作者
Nagai, Y
Kunimoto, T
Nagasaka, K
Nojri, H
Motokawa, M
Matsukura, F
Dietl, T
Ohno, H
机构
[1] Sci Univ Tokyo, Fac Sci, Dept Phys, Shinjuku Ku, Tokyo 1628601, Japan
[2] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[3] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Sendai, Miyagi 9808577, Japan
[4] Polish Acad Sci, Inst Phys, PL-00668 Warsaw, Poland
[5] Polish Acad Sci, Coll Sci, PL-00668 Warsaw, Poland
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2001年 / 40卷 / 11期
关键词
diluted magnetic semiconductor; ferromagnetic Ga1-xMnxAs; IR and FIR spectra; Mn impurity state; hopping conduction;
D O I
10.1143/JJAP.40.6231
中图分类号
O59 [应用物理学];
学科分类号
摘要
Infrared and far infrared transmission spectra have been measured for the ferromagnetic Ga1-xMnxAs (x = 0.034 and x = 0.050) between 10 and 12000 cm(-1). A broad peak is observed around 1600 cm(-1), and this energy is close to the deep acceptor level of Mn impurity in GaAs. A finite featureless absorption, spreading between this peak and the band gap, due to inter valence band transitions is also observed. At the same time, a non-zero absorption is observed in the lowest frequency studied, which points to the absorption by mobile holes related to the metallic DC conductivity. The frequency dependence in this range, which differs markedly from the Drude model, demonstrates a strong influence of electrostatic and magnetic disorder on the optical conductivity. In particular, the existence of a strong coupling between the Mn spins and the holes explains the considerable increase of the far infrared absorption below the ferromagnetic ordering temperature.
引用
收藏
页码:6231 / 6234
页数:4
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