High speed, high efficiency resonant-cavity enhanced InGaAs MSM photodetectors

被引：10

作者：

Strittmatter, A

Kollakowski, S

Droge, E

Bottcher, EH

Bimberg, D

机构：

[1] Technische Universität Berlin, Inst. für Festkörperphysik, D-10623 Berlin

来源：

ELECTRONICS LETTERS | 1996年 / 32卷 / 13期

关键词：

metal-semiconductor-metal structures; photodetectors; gallium indium arsenide;

D O I：

10.1049/el:19960810

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Resonant-cavity-enhanced In/InGaAs metal-semiconductor-metal photodetectors designed for 1.31 mu m wavelength and rear illumination are demonstrated. The bottom mirror of the microcavity consists of an InGaAlAs/InAlAs buried Bragg reflector, and the top mirror comprises the interdigitated contact metallisation and a Si/SiNx quarter wave stack deposited on the surface. An external quantum efficiency of 77%, and a 3dB bandwidth of 10GHz, are achieved with an InGaAs absorber thickness of 300nm.

引用

页码：1231 / 1232

页数：2

共 7 条

[1] RESONANT-CAVITY-ENHANCED PIN PHOTODETECTOR WITH 17GHZ BANDWIDTH-EFFICIENCY PRODUCT [J].