Chalcogenide-based non-volatile memory technology

被引：78

作者：

Maimon, J ^{[1
]}

Spall, E ^{[1
]}

Quinn, R ^{[1
]}

Schnur, S ^{[1
]}

机构：

[1] Ovonyx Inc, Manassas, VA 20110 USA

来源：

2001 IEEE AEROSPACE CONFERENCE PROCEEDINGS, VOLS 1-7 | 2001年

关键词：

D O I：

10.1109/AERO.2001.931188

中图分类号：

V [航空、航天];

学科分类号：

08 ; 0825 ;

摘要：

Chalcogenide is a proven phase change material used in re-writeable CDs and DVDs. This material changes phases, reversibly and quickly, between an amorphous state that is dull in appearance and electrically high in resistance, and a polyerystalline state that is highly reflective and low in resistance. The application of this commercially proven technology to create semiconductor memories is discussed. The successful results of an effort to create a memory cell that would allow for the production of a dense, low power, non-volatile memory is presented.

引用

页码：2289 / 2294

页数：6

共 9 条

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[3]

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