Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

被引：45

作者：

Cheng, JG ^{[1
]}

Wang, JL ^{[1
]}

Dechakupt, T ^{[1
]}

Trolier-McKinstry, S ^{[1
]}

机构：

[1] Penn State Univ, Mat Res Inst, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 23期

基金：

美国国家航空航天局;

关键词：

D O I：

10.1063/1.2140071

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 degrees C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm(2) at a substrate temperature of 400 degrees C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures <= 400 degrees C makes integration with polymeric substrates possible. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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