AFM tip induced formation of nanometer scale structures on WSe2 under defined conditions

被引:7
作者
Jaeckel, B
Gassenbauer, Y
Jaegermann, W
Tomm, Y
机构
[1] Tech Univ Darmstadt, Dept Mat & Earth Sci, Surface Sci Div, D-64287 Darmstadt, Germany
[2] Hahn Meitner Inst Berlin GmbH, D-14109 Berlin, Germany
关键词
electrochemical nanotechnology; AFM; STM; force-distance-curves; layered semiconductors;
D O I
10.1016/j.susc.2004.05.147
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Under controlled ambient conditions it is possible to produce different types of structures onto WSe2 (0001) surface with AFM by applying a voltage pulse between tip and sample. The structure size can be varied over three orders of magnitude from the nanometer-scale up to structures of several mu m in diameter. Four different types of structures were observed as surface roughening, hole structures induced by etching, surface oxide layers and volcano-like structures depending on experimental parameters as humidity as well as polarity, height and duration of the voltage pulses. Models of cluster formation mechanism will be given based on systematic studies of the experimental dependencies. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:65 / 79
页数:15
相关论文
共 32 条
[1]   TRIANGULAR STRUCTURES ON TUNGSTEN DISELENIDE INDUCED AND OBSERVED BY SCANNING TUNNELING MICROSCOPY [J].
AKARI, S ;
MOLLER, R ;
DRANSFELD, K .
APPLIED PHYSICS LETTERS, 1991, 59 (02) :243-245
[2]  
Al-Hilli A. A., 1972, Journal of Crystal Growth, V15, P93, DOI 10.1016/0022-0248(72)90129-7
[3]  
ARUCHAMY A, 1992, PHOTELECTROCHEMISTRY, P195
[4]   Scanning tunneling microscopy and spectroscopy of atomic modifications on WSe2 [J].
Asenjo, A ;
Schwaack, T ;
de Pablo, P ;
Gomez-Herrero, J ;
Schweizer, EK ;
Pettenkofer, C ;
Fuchs, H ;
Baro, AM .
SURFACE SCIENCE, 1998, 398 (1-2) :231-240
[5]   AFM-tip-induced and current-induced local oxidation of silicon and metals [J].
Avouris, P ;
Martel, R ;
Hertel, T ;
Sandstrom, R .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1998, 66 (Suppl 1) :S659-S667
[6]   Atomic force microscope tip-induced local oxidation of silicon: Kinetics, mechanism, and nanofabrication [J].
Avouris, P ;
Hertel, T ;
Martel, R .
APPLIED PHYSICS LETTERS, 1997, 71 (02) :285-287
[7]   Nanostructuring on WSe2 with the atomic force microscope by a potential controlled electrochemical reaction [J].
Bohmisch, M ;
Burmeister, F ;
Boneberg, J ;
Leiderer, P .
APPLIED PHYSICS LETTERS, 1996, 69 (13) :1882-1884
[8]   Electrical field induced growth of triangular nanometer structures on WSe2 [J].
Boneberg, J ;
Lohrmann, M ;
Bohmisch, M ;
Burmeister, F ;
LuxSteiner, M ;
Leiderer, P .
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1996, 99 (04) :567-570
[9]   Cross-sectional nano-spreading resistance profiling [J].
De Wolf, P ;
Clarysse, T ;
Vandervorst, W ;
Hellemans, L ;
Niedermann, P ;
Hanni, W .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1998, 16 (01) :355-361
[10]   Two-dimensional carrier profiling of InP structures using scanning spreading resistance microscopy [J].
De Wolf, P ;
Geva, M ;
Hantschel, T ;
Vandervorst, W ;
Bylsma, RB .
APPLIED PHYSICS LETTERS, 1998, 73 (15) :2155-2157