Temperature-gradient epitaxy under in situ growth mode diagnostics by scanning reflection high-energy electron diffraction

被引：53

作者：

Koida, T

Komiyama, D

Koinuma, H

Ohtani, M

Lippmaa, M

Kawasaki, M

机构：

[1] Tokyo Inst Technol, Frontier Collaborat Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Combinatorial Mat Explorat & Technol Corp, Tsukuba, Ibaraki, Japan

[3] Japan Sci & Technol Corp, CREST, Tsukuba, Ibaraki, Japan

[4] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan

[5] Univ Tokyo, Inst Solid State Phys, Chiba 2778581, Japan

[6] Tohoku Univ, Inst Mat Res, Aoba Ku, Sendai, Miyagi 9800812, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 04期

关键词：

D O I：

10.1063/1.1445483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have developed a parallel film growth method on a temperature-gradient substrate to quickly control and optimize the film growth mode. A continuous-wave neodymium-doped yttrium-aluminum-garnet laser heating was used to achieve a stable temperature gradient covering a 300 degreesC range of temperatures over a distance of 11 mm. The growth mode was determined by time-resolved scanning reflection high-energy electron diffraction. Transition from layer-by-layer to step-flow growth by the deposition temperature was observed during La0.5Sr0.5MnO3 film growth on a single SrTiO3 substrate, proving a powerful tool not only for investigating the growth dynamics but also for seeking the optimized deposition conditions in one run of experiment. (C) 2002 American Institute of Physics.

引用

页码：565 / 567

页数：3

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