Role of domain walls in the abnormal photovoltaic effect in BiFeO3

被引：487

作者：

Bhatnagar, Akash ^{[1
]}

Chaudhuri, Ayan Roy ^{[2
]}

Kim, Young Heon ^{[3
]}

Hesse, Dietrich ^{[1
]}

Alexe, Marin ^{[1
,4
]}

机构：

[1] Max Planck Inst Microstruct Phys, D-06120 Halle, Germany

[2] Leibniz Univ Hannover, Inst Elect Mat & Devices, D-30167 Hannover, Germany

[3] Korea Res Inst Stand & Sci, Taejon 305304, South Korea

[4] Univ Warwick, Dept Phys, Coventry CV4 7AL, W Midlands, England

来源：

NATURE COMMUNICATIONS | 2013年 / 4卷

关键词：

CURRENTS;

D O I：

10.1038/ncomms3835

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Recently, the anomalous photovoltaic (PV) effect in BiFeO3 (BFO) thin films, which resulted in open circuit voltages (V-oc) considerably larger than the band gap of the material, has generated a revival of the entire field of photoferroelectrics. Here, via temperature-dependent PV studies, we prove that the bulk photovoltaic (BPV) effect, which has been studied in the past for many non-centrosymmetric materials, is at the origin of the anomalous PV effect in BFO films. Moreover, we show that irrespective of the measurement geometry, V-oc as high as 50V can be achieved by controlling the conductivity of domain walls (DW). We also show that photoconductivity of the DW is markedly higher than in the bulk of BFO.

引用

页数：8

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