Theoretical analysis of line-edge roughness using FFT techniques

被引:10
作者
Ohfuji, T
Endo, M
Morimoto, A
机构
来源
MICROLITHOGRAPHY 1999: ADVANCES IN RESIST TECHNOLOGY AND PROCESSING XVI, PTS 1 AND 2 | 1999年 / 3678卷
关键词
edge roughness; ArF; resist; FFT; simulation;
D O I
10.1117/12.350261
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Although the line-edge roughness of resist patterns is becoming a serious problem as the size of resist patterns are decreased, quantitative analysis has rarely been seen so far. We investigated the line-edge roughness of ArF resist patterns using the FFT (Fast Fourier Transform) method. We found that all-the observed line-edge roughness had a specific FFT spectrum shape composed of a flat area at low frequency and a 1/root f component area at high frequency. The amount of line-edge roughness is independent of dose and linewidth but has a strong dependence on defocus. The patterns formed using TSI (Top-Surface Imaging) also have similar FFT spectrum shapes. Based on these findings, we proposed a line-edge roughness simulation method that achieves the observed FFT spectrum.
引用
收藏
页码:732 / 738
页数:7
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